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NLV37WZ16USG(2014) Просмотр технического описания (PDF) - ON Semiconductor

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NLV37WZ16USG
(Rev.:2014)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
NLV37WZ16USG Datasheet PDF : 5 Pages
1 2 3 4 5
NL37WZ16
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Condition
VCC
TA = 25°C
−40°C 3 TA 3 85°C
(V)
Min
Typ Max
Min
Max Units
VIH High−Level Input Volt-
age
1.65 to 1.95 0.75 VCC
2.3 to 5.5 0.7 VCC
0.75 VCC
V
0.7 VCC
VIL Low−Level Input Volt-
age
VOH High−Level Output
Voltage
VIN = VIH or VIL
IOH = −100 mA
IOH = −4 mA
IOH = −8 mA
1.65 to 1.95
2.3 to 5.5
0.25 VCC
0.3 VCC
0.25 VCC V
0.3 VCC
1.65 to 5.5 VCC − 0.1 VCC
VCC − 0.1
V
1.65
1.4
1.50
1.55
2.3
1.9
2.1
1.9
IOH = −12 mA
2.7
2.2
2.4
2.2
VOL Low−Level Output
Voltage
VIN = VIH or VIL
IOH = −16 mA
IOH = −24 mA
IOH = −32 mA
IOL = 100 mA
IOL = 4 mA
IOL = 8 mA
3.0
2.4
2.7
2.4
3.0
2.3
2.5
2.3
4.5
3.8
4.0
3.8
1.65 to 5.5
0.1
0.1
V
1.65
0.24
0.24
2.3
0.20
0.3
0.3
IOL = 12 mA
2.7
0.22
0.4
0.4
IOL = 16 mA
3.0
0.28
0.4
0.4
IOL = 24 mA
3.0
0.38 0.55
0.55
IOL = 32 mA
IIN
Input Leakage Current VIN = 5.5 V or GND
IOFF Power Off
Leakage Current
VIN = 5.5 V or
VOUT = 5.5 V
4.5
0 to 5.5
0
0.42 0.55
±0.1
1
0.55
±1.0
mA
10
mA
ICC Quiescent Supply Cur- VIN = 5.5 V or GND
5.5
rent
1
10
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS tR = tF = 2.5 ns; CL = 50 pF; RL = 500 W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TA = 25°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPLH
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPHL
Parameter
Propagation Delay
(Figure 3 and 4)
Condition
RL = 1 MW, CL = 15 pF
RL = 1 MW, CL = 15 pF
VCC (V) Min Typ Max
1.8 ± 0.15 1.8 6.0 7.9
2.5 ± 0.2 1.0 3.0 5.2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ RL = 1 MW, CL = 15 pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ RL = 500 W, CL = 50 pF
3.3 ± 0.3 0.8 2.3 3.6
1.2 3.0 4.6
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ RL = 1 MW, CL = 15 pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ RL = 500 W, CL = 50 pF
5.0 ± 0.5 0.5 1.8 2.9
0.8 2.4 3.8
−40°C 3 TA 3 85°C
Min
Max
1.8
8.8
Units
ns
1.0
5.8
0.8
4.0
1.2
5.1
0.5
3.2
0.8
4.2
CAPACITIVE CHARACTERISTICS
Symbol
Parameter
Condition
Typical
Units
CIN
Input Capacitance
VCC = 5.5 V, VI = 0 V or VCC
7.0
pF
CPD
Power Dissipation Capacitance (Note 7)
10 MHz, VCC = 3.3 V, VI = 0 V or VCC
10 MHz, VCC = 5.5 V, VI = 0 V or VCC
9
pF
11
7. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current
power consumption; PD =
can be obtained by the equation:
CPD  VCC2  fin ) ICC  VCC.
ICC(OPR)
=
CPD

VCC

fin
)
ICC.
CPD
is
used
to
determine
the
no−load
dynamic
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