IXTP1N100P Просмотр технического описания (PDF) - IXYS CORPORATION
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IXTP1N100P Datasheet PDF : 4 Pages
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Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs
VDS= 30V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 50Ω (External)
Qg(on)
Qgs
Qgd
VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
(TO-220)
Characteristic Values
Min. Typ. Max.
0.45
0.78
S
331
pF
24
pF
5.5
pF
20
ns
26
ns
55
ns
24
ns
15.5
nC
4.1
nC
8.0
nC
2.5 °C/W
0.50
°C/W
IXTA1N100P IXTP1N100P
IXTY1N100P
TO-220 (IXTP) Outline
Pins: 1 - Gate
2 - Drain
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
IS
VGS = 0V
1.0 A
ISM
Repetitive, pulse width limited by TJM
3.0 A
VSD
IF = IS, VGS = 0V, Note 1
1.5 V
trr
IF = 1A, -di/dt = 100A/μs,
VR = 100V, VGS = 0V
750
ns
TO-252 (IXTY) Outline
Note 1: Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%.
TO-263 (IXTA) Outline
Pins: 1 - Gate
3 - Source
2,4 - Drain
Dim.
A
A1
A2
b
b1
b2
c
c1
D
D1
E
E1
e
e1
H
L
L1
L2
L3
Millimeter
Min. Max.
2.19 2.38
0.89 1.14
0 0.13
0.64 0.89
0.76 1.14
5.21 5.46
0.46 0.58
0.46 0.58
5.97 6.22
4.32 5.21
6.35 6.73
4.32 5.21
2.28 BSC
4.57 BSC
9.40 10.42
0.51 1.02
0.64 1.02
0.89 1.27
2.54 2.92
Inches
Min. Max.
0.086 0.094
0.035 0.045
0 0.005
0.025 0.035
0.030 0.045
0.205 0.215
0.018 0.023
0.018 0.023
0.235 0.245
0.170 0.205
0.250 0.265
0.170 0.205
0.090 BSC
0.180 BSC
0.370 0.410
0.020 0.040
0.025
0.035
0.100
0.040
0.050
0.115
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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