IRF9130 Просмотр технического описания (PDF) - Intersil

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IRF9130

-12A, -100V, 0.30 Ohm, P-Channel Power MOSFET

Intersil 

IRF9130

Typical Performance Curves Unless Otherwise Specified (Continued)

100

10µs

100µs

10

1ms

OPERATION IN THIS AREA

IS LIMITED BY rDS(ON)

1

10ms

100ms

DC

TC = 25oC

TJ = MAX RATED

SINGLE PULSE

0.1

1

10

100

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

-20

VGS = -9V

-16

VGS = -10V PULSE DURATION = 80µs

VGS = -8V

-12

VGS = -7V

-8

VGS = -6V

-4

VGS = -5V

VGS = -4V

0

0

-10

-20

-30

-40

-50

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 5. OUTPUT CHARACTERISTICS

-10

PULSE DURATION = 80µs

-8

VGS = -8V

VGS = -9V

VGS = -10V

-6

VGS = -7V

VGS = -6V

-4

VGS = -5V

-2

VGS = -4V

0

0

-1

-2

-3

-4

-5

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 6. SATURATION CHARACTERISTICS

1.0

PULSE DURATION = 2µs

VGS = -10V

0.8

0.6

0.4

VGS = - 20V

0.2

0

0

-10

-20

-30

-40

-50

ID, DRAIN CURRENT (A)

NOTE: Heating effect of 2µs pulse is minimal.

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

-20

PULSE DURATION = 80µs

VDS ≥ I D(ON) x rDS(ON)MAX

-16

TJ = 125oC

-12

TJ = 25oC

TJ = -55oC

-8

-4

0

0

-2

-4

-6

-8

-10

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 7. TRANSFER CHARACTERISTICS

2.2

VGS = -10V, ID = -4A

1.8

1.4

1.0

0.6

0.2

-40

0

40

80

120

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

5-11

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