IRFE9110 Просмотр технического описания (PDF) - International Rectifier

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IRFE9110

REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS SURFACE MOUNT (LCC-18)

International Rectifier 

IRFE9110

400

 VGS = 0V, f = 1MHz

Ciss = Cgs + Cgd , Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

300

200

100

0

1

 Ciss

C oss

C rss

10

100

VDS , Drain-to-Source Voltage (V)

20  ID = -2.5 A

16

 VDS = 80V

VDS = 50V

VDS = 20V

12

8

4

 FOR TEST CIRCUIT

SEE FIGURE 13

0

0

4

8

12

QG, Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

10

100

 OPERATION IN THIS AREA LIMITED

BY RDS(on)

1

 TJ = 150° C

 TJ = 25° C

0.1

0.0

 VGS = 0 V

0.5 1.0 1.5 2.0 2.5 3.0 3.5

-VSD ,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

10

 100us

 1ms

1

 10ms

 TC = 25 °C

TJ = 150 °C

Single Pulse

0.1

1

10

100

1000

-VDS, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

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