MMDF2C02E Просмотр технического описания (PDF) - ON Semiconductor
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MMDF2C02E Datasheet PDF : 10 Pages
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MMDF2C02E
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain−to−source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance −
General Data and Its Use.”
Switching between the off−state and the on−state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded, and that the
transition time (tr, tf) does not exceed 10 μs. In addition the
total power averaged over a complete switching cycle must
not exceed (TJ(MAX) − TC)/(RθJC).
A power MOSFET designated E−FET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and must be adjusted for operating
conditions differing from those specified. Although industry
practice is to rate in terms of energy, avalanche energy
capability is not a constant. The energy rating decreases
non−linearly with an increase of peak current in avalanche
and peak junction temperature.
Although many E−FETs can withstand the stress of
drain−to−source avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 9). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
N−Channel
100
VGS = 20 V
SINGLE PULSE
Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″
thick single sided) with one die operating, 10s max.
10 TC = 25°C
100 μs10 μs
10 ms
P−Channel
100
VGS = 20 V
SINGLE PULSE
Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″
thick single sided) with one die operating, 10s max.
10 TC = 25°C
100 μs 10 μs
10 ms
1
dc
1
dc
0.1
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 8. Maximum Rated Forward Biased
Safe Operating Area
280
I pk = 9 A
240
200
160
120
80
40
0
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 9. Maximum Avalanche Energy versus
Starting Junction Temperature
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 8. Maximum Rated Forward Biased
Safe Operating Area
280
I pk = 7 A
240
200
160
120
80
40
0
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 9. Maximum Avalanche Energy versus
Starting Junction Temperature
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