MTD6P10E Просмотр технического описания (PDF) - ON Semiconductor
Номер в каталоге
Компоненты Описание
Список матч
MTD6P10E Datasheet PDF : 7 Pages
| |||
MTD6P10E
TYPICAL ELECTRICAL CHARACTERISTICS
12
TJ = 25°C
VGS = 10 V
10
9V
8
8V
6
7V
4
2
6V
5V
0
0 2 4 6 8 10 12 14 16 18 20
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
1.3
1.2 VGS = 10 V
1.1
1.0
0.9
TJ = 100°C
0.8
0.7
25°C
0.6
0.5
−55 °C
0.4
0.3
0
2
4
6
8
10
12
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
12
VDS ≥ 10 V
10
8
TJ = −55°C
25°C
100°C
6
4
2
0
2
34
56
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
1.0
TJ = 25°C
0.9
0.8
0.7
VGS = 10 V
0.6
0.5
15 V
0.4 0
2
4
6
8
10
12
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.8
VGS = 10 V
1.6 ID = 3 A
1.4
1.2
1.0
0.8
0.6
0.4
− 50 − 25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
100
VGS = 0 V
TJ = 125°C
10
− 120 − 100 − 80
− 60
− 40
− 20
0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
http://onsemi.com
3
Share Link: 