IRF740 Просмотр технического описания (PDF) - Inchange Semiconductor

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IRF740

N-Channel MOSFET Transistor

Inchange Semiconductor 

isc N-Channel MOSFET Transistor

·FEATURES

·Drain Source Voltage-

: VDSS= 400V(Min)

·Static Drain-Source On-Resistance

: RDS(on) = 0.55Ω(Max)

·Fast Switching Speed

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

·DESCRITION

·Switch mode power supply

·Uninterruptable power supply

·High speed power switching

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL ARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

400

V

VGS

Gate-Source Voltage

±30

V

ID

Drain Current-continuous@ TC=25℃

10

A

IDM

Drain Current-Single Plused

40

A

Ptot

Total Dissipation@TC=25℃

125

W

Tj

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c Thermal Resistance,Junction to Case

1.0 ℃/W

Rth j-a Thermal Resistance,Junction to Ambient

62 ℃/W

IRF740

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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