IRF740 Просмотр технического описания (PDF) - Intersil

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IRF740

10A, 400V, 0.550 Ohm, N-Channel Power MOSFET

Intersil 

IRF740

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

IRF740

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

400

V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

400

V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

10

A

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

6.3

A

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

40

A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±20

V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

125

W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.0

W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

520

mJ

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

300

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

260

oC

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNITS

Drain to Source Breakdown Voltage

Gate to Threshold Voltage

Zero Gate Voltage Drain Current

BVDSS VGS = 0V, ID = 250µA (Figure 10)

400

-

-

V

VGS(TH) VGS = VDS, ID = 250µA

2.0

-

4.0

V

IDSS VDS = Rated BVDSS, VGS = 0V

-

-

25

µA

VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC

-

-

250

µA

On-State Drain Current (Note 2)

Gate to Source Leakage Current

Drain to Source On Resistance (Note 2)

Forward Transconductance (Note 2)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

ID(ON)

IGSS

rDS(ON)

gfs

tD(ON)

tr

tD(OFF)

tf

VDS > ID(ON) x rDS(ON)MAX, VGS = 10V

VGS = ±20V

VGS = 10V, ID = 5.2A (Figures 8, 9)

VDS ≥ 50V, ID = 5.2A (Figure 12)

VDD = 200V, ID ≈ 10A, RG = 9.1Ω,

RL = 20Ω, VGS = 10V

MOSFET Switching Times are Essentially

Independent of Operating Temperature

10

-

-

A

-

- ±500 nA

-

0.47 0.550 Ω

5.8 8.9

-

S

-

15

21

ns

-

25

41

ns

-

52

75

ns

-

25

36

ns

Total Gate Charge

(Gate to Source + Gate to Drain)

Gate to Source Charge

Gate to Drain “Miller” Charge

Qg(TOT) VGS = 10V, ID = 10A, VDS = 0.8 x Rated BVDSS

-

41

63

nC

Ig(REF) = 1.5mA (Figure 14)

Qgs

Gate Charge is Essentially Independent of Operating

Temperature

-

6.5

-

nC

Qgd

-

23

-

nC

Input Capacitance

Output Capacitance

CISS

COSS

VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)

- 1250 -

pF

-

300

-

pF

Reverse-Transfer Capacitance

CRSS

-

80

-

pF

Internal Drain Inductance

Internal Source Inductance

LD

Measured From the

Modified MOSFET

Contact Screw on Tab to Symbol Showing the

Center of Die

Internal Devices

Measured From the Drain Inductances

Lead, 6mm (0.25in) From

D

Package to Center of Die

LD

LS

Measured From the

Source Lead, 6mm

G

(0.25in) From Header to

LS

Source Bonding Pad

S

-

3.5

-

nH

-

4.5

-

nH

-

7.5

-

nH

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

RθCS

RθJA

Free Air Operation

-

-

1.0 oC/W

-

-

62.5 oC/W

4-240

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