BFP450 Просмотр технического описания (PDF) - Siemens AG
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BFP450 Datasheet PDF : 8 Pages
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NPN Silicon RF Transistor
• For medium power amplifiers
• Compression point P-1dB = +19 dBm at 1.8 GHz
maximum available gain Gma = 14 dB at 1.8 GHz
Noise figure F = 1.25 dB at 1.8 GHz
• Transition frequency fT = 24 GHz
• Gold metalization for high reliability
• SIEGET ® 25 - Line
Siemens Grounded Emitter Transistor
25 GHz fT - Line
SIEGET®25 BFP 450
3
4
2
1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
BFP 450 ANs
Q62702-F1590
Pin Configuration
1=B 2=E 3=C
4=E
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TS ≤ 96 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point 1)
Symbol
VCEO
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
Value
4.5
15
1.5
100
10
450
150
-65 ...+150
-65 ...+150
≤ 130
Package
SOT-343
Unit
V
mA
mW
°C
K/W
1) TS is measured on the collector lead at the soldering point to the pcb
SSeemmicioconndduuctcotor rGGrorouupp
11
Sep-109998-1-1919-081
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