HMC594LC3B Просмотр технического описания (PDF) - Hittite Microwave

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HMC594LC3B

GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz

Hittite Microwave 

v00.0307

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

RF Input Power (RFin)(Vdd = +6.0 Vdc)

Channel Temperature

Continuous Pdiss (T = 85 °C)

(derate 10 mW/°C above 85 °C)

Thermal Resistance

(channel to ground paddle)

Storage Temperature

Operating Temperature

7 Vdc

+15 dBm

150 °C

0.65 W

100 °C/W

-65 to +150 °C

-40 to +85 °C

HMC594LC3B

GaAs PHEMT MMIC LOW NOISE

AMPLIFIER, 2 - 4 GHz

5

Typical Supply Current vs. Vdd

Vdd (V)

+5.5

+6.0

+6.5

Idd (mA)

97

100

103

Note: Amplifier will operate over full voltage range shown above

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Outline Drawing

NOTES:

1. PACKAGE BODY MATERIAL: ALUMINA

2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER Ni.

3. DIMENSIONS ARE IN INCHES [MILLIMETERS].

4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE

5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.

6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED

TO PCB RF GROUND.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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