HMC594 Просмотр технического описания (PDF) - Analog Devices

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HMC594

GaAs pHEMT MMIC LOW NOISE AMPLIFIER

Analog Devices 

v01.0312

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

rf input power (rfiN)(Vdd = +6.0 Vdc)

Channel Temperature

Continuous pdiss (T= 85 °C)

(derate 11.7 mw/°C above 85 °C)

Thermal resistance

(channel to die bottom)

storage Temperature

operating Temperature

+7 Vdc

+15 dBm

175 °C

0.76 w

85 °C/w

-65 to +150 °C

-55 to +85 °C

Outline Drawing

HMC594

GaAs pHEMT MMIC LOW NOISE

AMPLIFIER, 2 - 4 GHz

Typical Supply Current vs. Vdd

Vdd (Vdc)

idd (mA)

+5.5

97

+6.0

100

+6.5

103

Note: Ampliier will operate over full voltage ranges shown

above.

eleCTrosTATiC seNsiTiVe DeViCe

oBserVe HANDliNG preCAUTioNs

Die Packaging Information [1]

standard

Alternate

Gp-1 (Gel pack)

[2]

[1] Refer to the “Packaging Information” section for die

packaging dimensions.

[2] For alternate packaging information contact Hittite

Microwave Corporation.

NoTes:

1. All DimeNsioNs Are iN iNCHes [mm]

2. Die THiCKNess is .004”

3. TYpiCAl BoND is .004” sQUAre

4. BACKsiDe meTAlliZATioN: GolD

5. BoND pAD meTAlliZATioN: GolD

6. BACKsiDe meTAl is GroUND.

7. CoNNeCTioN NoT reQUireD for UNlABeleD BoND pADs.

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