HMC559 Просмотр технического описания (PDF) - Micross Components
Номер в каталоге
Компоненты Описание
Список матч
HMC559 Datasheet PDF : 11 Pages
| |||
v03.0208
HMC559
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 20 GHz
Pad Descriptions
Pad Number
Function
1
IN
2
Vgg2
Description
This pad is DC coupled and matched
to 50 Ohms. Blocking capacitor is required.
Gate control 2 for amplifier. Attach bypass
capacitor per application circuit herein. For nominal
operation +4V should be applied to Vgg2.
3
ACG2
Low frequency termination. Attach bypass
capacitor per application circuit herein.
RF output for amplifier. Connect DC bias (Vdd) network to
4
OUT & Vdd
provide drain current (Idd). See application circuit herein.
Gate control 1 for amplifier. Attach bypass
capacitor per application circuit herein. Please
5
Vgg1
follow “MMIC Amplifier Biasing Procedure”
application note.
6
ACG1
Low frequency termination. Attach bypass
capacitor per application circuit herein.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Interface Schematic
3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 67
Share Link: 