HMC518 Просмотр технического описания (PDF) - Analog Devices

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HMC518

GaAs PHEMT MMIC LOW NOISE AMPLIFIER

Analog Devices 

Absolute Maximum Ratings

Drain Bias Voltage (Vdd1, Vdd2, Vdd3)

RF Input Power (RFIN)(Vdd = +3.0 Vdc)

Channel Temperature

Continuous Pdiss (T= 85 °C)

(derate 29 mW/°C above 85 °C)

Thermal Resistance

(channel to die bottom)

Storage Temperature

Operating Temperature

ESD Sensitivity (HBM)

+5.5 Vdc

+7 dBm

175 °C

2.65 W

54.6 °C/W

-65 to +150 °C

-55 to +85 °C

Class 1A

Outline Drawing

HMC518

v02.0217

GaAs pHEMT MMIC LOW NOISE

AMPLIFIER, 20 - 32 GHz

Typical Supply Current vs. Vdd

Vdd (Vdc)

Idd (mA)

+2.5

61

+3.0

65

+3.5

69

Note: Amplifier will operate over full voltage ranges shown

above.

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Die Packaging Information [1]

Standard

Alternate

GP-2 (Gel Pack)

[2]

[1] Refer to the “Packaging Information” section for die

packaging dimensions.

[2] For alternate packaging information contact Hittite

Microwave Corporation.

NOTES:

1. ALL DIMENSIONS ARE IN INCHES [MM]

2. DIE THICKNESS IS .004”

3. TYPICAL BOND IS .004” SQUARE

4. BACKSIDE METALLIZATION: GOLD

5. BOND PAD METALLIZATION: GOLD

6. BACKSIDE METAL IS GROUND.

7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.

For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106

Phone: 781-329-4700 • Order online at www.analog.com

Application Support: Phone: 1-800-ANALOG-D

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