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HMC221BETR Просмотр технического описания (PDF) - Analog Devices

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HMC221BETR Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
HMC221B
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Control Voltage Range (A and B)
RF Input Power Level (CW Peak,
VCTL = 0 V/5 V)
10 kHz to 10 MHz
10 MHz to 20 MHz
20 MHz to 30 MHz
30 MHz to 250 MHz
250 MHz to 3.0 GHz
Hot Switching RF Input Power Level
(CW Peak, VCTL = 0 V/5 V)
10 kHz to 250 MHz
250 MHz to 3.0 GHz
Continuous Power Dissipation, PDISS
(at TCASE = 85°C)
Junction to Case Thermal Resistance, QJC
Temperature
Junction, TJ
Storage
Reflow1 (MSL1 Rating)
HMC221B
HMC221BE
ESD Sensitivity
Human Body Model (HBM)
Rating
−0.2 V dc to 12 V dc
0.36 W
8 dBm
10 dBm
11 dBm
14 dBm
31 dBm
6 dBm
20 dBm
0.36 W
178°C/W
150°C
−65°C to +150°C
235°C
260°C
250 V (Class 1A)
1 See the Ordering Guide for additional information.
Data Sheet
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
ESD CAUTION
Rev. A | Page 4 of 9

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