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HMC-ALH382

GaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz

Analog Devices 

v03.1210

1

Typical Applications

This HMC-ALH382 is ideal for:

• Short Haul / High Capacity Links

• Wireless LANs

• Military & Space

Functional Diagram

HMC-ALH382

GaAs HEMT LOW NOISE

AMPLIFIER, 57 - 65 GHz

Features

Noise Figure: 3.8 dB

P1dB: +12 dBm

Gain: 21 dB

Supply Voltage: +2.5V

50 Ohm Matched Input/Output

Die Size: 1.55 x 0.73 x 0.1 mm

General Description

The HMC-ALH382 is a high dynamic range, four

stage GaAs HEMT MMIC Low Noise Amplifier

(LNA) which operates between 57 and 65 GHz. The

HMC-ALH382 features 21 dB of small signal gain,

4 dB of noise figure and an output power of +12

dBm at 1dB compression from a +2.5V supply

voltage. All bond pads and the die backside are Ti/

Au metallized and the amplifier device is fully

passivated for reliable operation. This versatile LNA

is compatible with conventional die attach methods,

as well as thermocompression and thermosonic

wirebonding, making it ideal for MCM and hybrid

microcircuit applications. All data shown herein is

measured with the chip in a 50 Ohm environment and

contacted with RF probes.

Electrical Specifications, TA = +25° C, Vdd = 2.5V, Idd = 64 mA*

Parameter

Min.

Typ.

Frequency Range

57 - 65

Gain

19

21

Noise Figure

4

Input Return Loss

12

Output Return Loss

10

Output Power for 1 dB Compression (P1dB)

12

Supply Current (Idd)(Vdd= 2.5V,Vgg= -0.3V Typ.)

64

*Unless otherwise indicated, all measurements are from probed die

[2] Adjust Vgg between -1V to +0.3V (Typ. -0.2V) to achieve Iddtotal = 64 mA

Max.

5.5

100

Units

GHz

dB

dB

dB

dB

dBm

mA

1-1

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