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MAPLST1900-060CF

LDMOS RF Line Power FET Transistor 60 W , 1890-1925 MHz, 26V

M/A-COM Technology Solutions, Inc. 

MAPLST1900-060CF

LDMOS RF Line Power FET Transistor

60 W , 1890-1925 MHz, 26V

• Designed for personal handy phone (PHS) applications in the 1890-

1925 MHz frequency band.

• Typical performance in PHS mode at -65 dBc ACPR (600kHz):

Average output power: 16W

Gain: 12.5dB (typ.)

Efficiency: 26% (typ.)

• 10:1 VSWR ruggedness at 16W, 26V, 1890MHz)

M/A-COM Products

Released - Rev. 07.07

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MAXIMUM RATINGS

MAPLST1900-060CF

THERMAL CHARACTERISTICS

NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be ob-

served.

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ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

Commitment to produce in volume is not guaranteed.

changes to the product(s) or information contained herein without notice.

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