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HMC-ALH311 Просмотр технического описания (PDF) - Hittite Microwave

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HMC-ALH311 Datasheet PDF : 6 Pages
1 2 3 4 5 6
v02.0209
HMC-ALH311
GaAs HEMT MMIC LOW NOISE
DRIVER AMPLIFIER, 22.0 - 26.5 GHz
Pad Descriptions
Pad Number
Function
1
RFIN
2
RFOUT
Description
This pad is AC coupled
and matched to 50 Ohms.
This pad is AC coupled
and matched to 50 Ohms.
1
Interface Schematic
3
Vdd
Power Supply Voltage for the amplifier. See assembly for
required external components.
Gate control for amplifier. Please follow “MMIC Amplifier Bias-
4
Vgg
ing Procedure” application note. See assembly for required
external components.
Die bottom
GND
Die bottom must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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