HMC594_ Просмотр технического описания (PDF) - Hittite Microwave

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HMC594_

ACTIVE BIAS CONTROLLER

Hittite Microwave 

v00.0611

HMC981

ACTIVE BIAS CONTROLLER

13

Pad Descriptions

Pad Number

1, 5, 8, 10,

13, 15, 20,

23, 25, 26,

Die Bottom

Function

GND

2

EN

3

SW

Description

These pads and the die bottom must be connected to a

high quality RF/DC ground.

Enable pad. System is enabled when Ven is HIGH (VDIG).

If left floating, Ven defaults to HIGH (enabled).

Internal switch resistance control pad. If left floating, VSW

defaults to HIGH.

12

DISBLSC

Disables short circuit lock down when pulled to ground.

Leave it floating to enable short circuit lock down.

Control voltage of the VG2. Use a resistor divider between

4

VG2CONT

VDD and GND to set the voltage. VG2 is typically 1.3V

lower than the VG2CONT

19

VG2

6-7, 29-30

VDD, VDIG

Second gate control.

Bias supply pan. Connect supply voltage

to this pad with appropriate filtering.

Interface Schematic

9

VREF

1.5V reference voltage. 0.1uF or greater capacitor to GND

is needed for noise filtering.

To adjust the bias current of the external amplifier connect

11

ISENSE

a resistor (Rsense) from ISENSE pad to GND. Use Eqn.2

to

determine the required Rsense value.

13 - 7

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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