CY62128EV30 Просмотр технического описания (PDF) - Cypress Semiconductor

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CY62128EV30

1 Mbit (128K x 8) Static RAM

Cypress Semiconductor 

CY62128EV30 MoBL®

Document History Page

Document Title: CY62128EV30 MoBL® 1 Mbit (128K x 8) Static RAM

Document Number: 38-05579

REV. ECN NO. Issue Date Orig. of

Change

Description of Change

**

285473 See ECN

PCI

New Data Sheet

*A

461631 See ECN

NXR Converted from Preliminary to Final

Removed 35 ns Speed Bin

Removed “L” version of CY62128EV30

Removed Reverse TSOP I package from Product offering.

Changed ICC (Typ) from 8 mA to 11 mA and ICC (Max) from 12 mA to 16 mA for f =

fmax

Changed ICC (max) from 1.5 mA to 2.0 mA for f = 1 MHz

Changed ISB2 (max) from 1 μA to 4 μA

Changed ISB2 (Typ) from 0.5 μA to 1 μA

Changed ICCDR (max) from 1 μA to 3 μA

Changed the AC Test load Capacitance value from 50 pF to 30 pF

Changed tLZOE from 3 to 5 ns

Changed tLZCE from 6 to 10 ns

Changed tHZCE from 22 to 18 ns

Changed tPWE from 30 to 35 ns

Changed tSD from 22 to 25 ns

Changed tLZWE from 6 to 10 ns

Updated the Ordering Information table.

*B

464721 See ECN

NXR Updated the Block Diagram on page # 1

*C

1024520 See ECN

VKN

Added final Automotive-A and Automotive-E information

Added footnote #9 related to ISB2 and ICCDR

Updated Ordering Information table

*D

2257446 See ECN

NXR

Changed the Maximum rating of Ambient Temperature with Power Applied from

55°C to +125°C to –55°C to +125°C.

*E

2702841 05/06/2009 VKN/PYRS Added -45SXA part in the Ordering Information table

Corrected “tPD” spec description in the “Switching Characteristics” table.

Document #: 38-05579 Rev. *E

Page 11 of 12

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