CY62128EV30(2007) Просмотр технического описания (PDF) - Cypress Semiconductor
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CY62128EV30 Datasheet PDF : 11 Pages
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CY62128EV30 MoBL®
Document History Page
Document Title: CY62128EV30 MoBL® 1 Mbit (128K x 8) Static RAM
Document Number: 38-05579
REV. ECN NO. Issue Date Orig. of
Change
Description of Change
**
285473 See ECN PCI New Data Sheet
*A
461631 See ECN NXR Converted from Preliminary to Final
Removed 35 ns Speed Bin
Removed “L” version of CY62128EV30
Removed Reverse TSOP I package from Product offering.
Changed ICC (Typ) from 8 mA to 11 mA and ICC (Max) from 12 mA to 16 mA for f = fmax
Changed ICC (max) from 1.5 mA to 2.0 mA for f = 1 MHz
Changed ISB2 (max) from 1 µA to 4 µA
Changed ISB2 (Typ) from 0.5 µA to 1 µA
Changed ICCDR (max) from 1 µA to 3 µA
Changed the AC Test load Capacitance value from 50 pF to 30 pF
Changed tLZOE from 3 to 5 ns
Changed tLZCE from 6 to 10 ns
Changed tHZCE from 22 to 18 ns
Changed tPWE from 30 to 35 ns
Changed tSD from 22 to 25 ns
Changed tLZWE from 6 to 10 ns
Updated the Ordering Information table.
*B
464721 See ECN NXR Updated the Block Diagram on page # 1
*C 1024520 See ECN VKN Added final Automotive-A and Automotive-E information
Added footnote #9 related to ISB2 and ICCDR
Updated Ordering Information table
Document #: 38-05579 Rev. *C
Page 11 of 11
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