2N4853 Просмотр технического описания (PDF) - Digitron Semiconductors
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2N4853 Datasheet PDF : 4 Pages
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DIGITRON SEMICONDUCTORS
2N4851-2N4853
PN UNIJUNCTION TRANSISTORS
MAXIMUM RATINGS
Rating
RMS power dissipation
RMS emitter current
Peak-pulse emitter current
Emitter reverse voltage
Interbase voltage
Operating junction
temperature range
Storage temperature range
Symbol
PD
Ie
ie
VB2E
VB2B1
TJ
Tstg
Value
300
50
1.5
30
35
-65 to +125
-65 to +200
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Rating
Part number
Symbol
Intrinsic standoff ratio
(VB2B1 = 10 V)
2N4851
η
2N4852, 2N4853
Interbase resistance
(VB2B1 = 3 V, IE = 0)
RBB
Emitter reverse current
(VB2E = 30 V)
2N4851, 2N4852
2N4853
IEB2O
Peak point emitter current
(VB2B1 = 25 V)
Valley point current
(VB2B1 = 20 V, RB2 = 100Ω)
Base one peak pulse voltage
(V1 = 20V)
Maximum frequency of oscillation
2N4851, 2N4852
2N4853
2N4851
2N4852
2N4853
2N4851
2N4852
2N4853
IP
IV
VOB1
f(max)
Min
0.56
0.70
4.7
-
-
-
-
2.0
4.0
6.0
3.0
5.0
6.0
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
0.25
Unit
mW
mA
Amp
Volts
Volts
°C
°C
Max
0.75
0.85
9.1
100
50
2
0.4
-
-
-
-
-
-
-
Unit
-
kΩ
nA
µA
mA
Volts
MHz
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20121019
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