P2103NV Просмотр технического описания (PDF) - Niko Semiconductor

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P2103NV

N- & P-Channel Enhancement Mode Field Effect Transistor

Niko Semiconductor 

NIKO-SEM

N- & P-Channel Enhancement Mode

Field Effect Transistor

P2103NV

SOP-8

Gate-Body Leakage

Zero Gate Voltage Drain Current

VDS = 0V, VGS = ±20V

N-Ch

IGSS

VDS = 0V, VGS = ±20V

P-Ch

VDS = 24V, VGS = 0V

N-Ch

VDS = -24V, VGS = 0V

P-Ch

IDSS

VDS = 20V, VGS = 0V, TJ = 55 °C N-Ch

P-Ch

VDS = -20V, VGS = 0V, TJ = 55 °C

±100

nA

±100

1

-1

µA

10

-10

On-State Drain Current1

ID(ON)

Drain-Source

Resistance1

On-State

RDS(ON)

Forward Transconductance1

gfs

VDS = 5V, VGS = 10V

VDS =-5V, VGS = -10V

VGS = 4.5V, ID = 6A

VGS = -4.5V, ID = -5A

VGS = 10V, ID = 7A

VGS = -10V, ID = -6A

VDS = 10V, ID = 5A

VDS = -10V, ID = -5A

N-Ch 28

A

P-Ch -24

N-Ch

P-Ch

N-Ch

P-Ch

21 32

44 60

mΩ

14 21

28 35

N-Ch

8

S

P-Ch

7

DYNAMIC

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge2

Gate-Source Charge2

Gate-Drain Charge2

N-Ch

1700

Ciss

N-Channel

P-Ch

970

VGS = 0V, VDS = 10V, f = 1MHz N-Ch

380

Coss

P-Channel

P-Ch

370

pF

VGS = 0V, VDS = -10V, f = 1MHz N-Ch

260

Crss

P-Ch

180

Qg

N-Channel

N-Ch

40

VDS = 0.5V(BR)DSS, VGS = 10V, P-Ch

28

ID = 6A

N-Ch

28

Qgs

P-Channel

P-Ch

6

nC

VDS = 0.5V(BR)DSS, VGS = -10V, N-Ch

12

Qgd

ID = -5A

P-Ch

12

2

OCT-22-2003

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