2N5298 Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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2N5298 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ;IB= 0
VCEV
Collector-Emitter Sustaining Voltage IC=100mA ;VBE= 1.5V
VCER
Collector-Emitter Sustaining Voltage IC=100mA ;RBE= 100Ω
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A
VBE(on) Base-Emitter On Voltage
ICEV
Collector Cutoff Current
ICER
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 1.5A; VCE= 4V
VCE= 65V; VBE= 1.5V;
VCE= 65V; VBE= 1.5V; TC= 150℃
VCE= 50V; RBE= 100Ω
VCE= 50V; RBE= 100Ω; TC= 150℃
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 1.5A; VCE= 4V
fT
Current-Gain—Bandwidth Product IC= 0.2A; VCE= 4V
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= 1.5A; IB= 0.15A; VCC= 30V
2N5298
MIN MAX UNIT
60
V
80
V
70
V
1.0
V
1.5
V
0.5
3.0
mA
0.5
2.0
mA
1.0
mA
20
80
0.8
MHz
5.0
μs
15
μs
SPTECH website：www.superic-tech.com
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