2SB557 Просмотр технического описания (PDF) - New Jersey Semiconductor

Номер в каталоге

Компоненты Описание

Список матч

2SB557

Silicon PNP Power Transistors

New Jersey Semiconductor 

Silicon PNP Power Transistors

2SB557

ELECTRICAL CHARACTERISTICS

Tj=25"C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage lc= -30mA; IB= 0

V(BR)EBO Emitter-Base Breakdown Voltage

lE=-1mA;lc=0

VcE(sat)

Collector-Emitter Saturation Voltage

lc= -5A; IB= -0.5A

VsE(on) Base-Emitter On Voltage

lc= -5A; VCE= -5V

ICBO

Collector Cutoff Current

VCB= -60V; IE= 0

IEBO

Emitter Cutoff Current

V6B= -5V; lc= 0

hpE-1 DC Current Gain

lc= -1A; VCE= -5V

hpE-2

DC Current Gain

lc= -5A; VCE= -5V

COB

Output Capacitance

|E=0;VCB=-10V;f=1MHz

fr

Current-Gain—Bandwidth Product

lc= -1A; VCE= -5V

MIN TYP. MAX UNIT

-120

V

-5

V

-2.5

V

-2.0

V

-0.1

mA

-0.1 mA

40

140

20

280

PF

7

MHz

1 Classifications

R

0

40-80

70-140

Share Link: