STB55NF06 Просмотр технического описания (PDF) - STMicroelectronics

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STB55NF06

N-channel 60V - 0.015Ω - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET™ II Power MOSFET

STMicroelectronics 

STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP

Electrical characteristics

Table 5. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM (1)

VSD (2)

trr

Qrr

IRRM

Source-drain current

Source-drain current

(pulsed)

Forward on voltage

ISD = 50A, VGS = 0

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 50A,

di/dt = 100A/µs,

VDD = 30V, Tj = 150°C

(see Figure 16)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Min. Typ. Max. Unit

50

A

200 A

1.5 V

75

ns

170

nC

4.5

A

5/18

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