STB55NF06T4 Просмотр технического описания (PDF) - STMicroelectronics

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STB55NF06T4

N-channel 60V - 0.015Ω - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET™ II Power MOSFET

STMicroelectronics 

Electrical characteristics

STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3. On/off states

Symbol

Parameter

Drain-source

V(BR)DSS breakdown voltage

IDSS

Zero gate voltage

drain current (VGS = 0)

IGSS

VGS(th)

RDS(on)

Gate-body leakage

current (VDS = 0)

Gate threshold voltage

Static drain-source on

resistance

Test conditions

Min. Typ. Max. Unit

ID = 250µA, VGS =0

60

V

VDS = max ratings

VDS = max ratings,

TC = 125°C

1

µA

10

µA

VGS = ± 20V

±100 nA

VDS = VGS, ID = 250µA

2

3

4

V

VGS = 10V, ID = 27.5A

0.015 0.018 Ω

Table 4.

Symbol

Dynamic

Parameter

Test conditions

gfs (1)

Forward

transconductance

VDS = 15V, ID = 27.5A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25V, f = 1MHz,

VGS = 0

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 30V, ID = 27.5A

RG = 4.7Ω VGS = 10V

(see Figure 14)

Qg

Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 48V, ID = 55A,

VGS = 10V

(see Figure 15)

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

Min. Typ. Max. Unit

18

S

1300

pF

300

pF

105

pF

20

ns

50

ns

36

ns

15

ns

44.5 60

nC

10.5

nC

17.5

nC

4/18

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