P55NF06 Просмотр технического описания (PDF) - STMicroelectronics
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P55NF06
STMicroelectronics
P55NF06 Datasheet PDF : 18 Pages
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STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
TO-220
D2PAK
I2PAK
TO-220FP
VDS
VGS
ID
ID
IDM(2)
Ptot
EAS (3)
dv/dt (4)
Drain-source voltage (VGS = 0)
Gate- source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating Factor
Single pulse avalanche energy
Peak diode recovery voltage slope
50
35
200
110
0.73
60
± 20
340
7
50(1)
35(1)
200(1)
30
0.20
VISO
Insulation withstand voltage (DC)
-
2500
Tstg
Storage temperature
Tj
Max. operating junction temperature
-55 to 175
1. Refer to soa for the max allowable current value on FP-type due to Rth value
2. Pulse width limited by safe operating area.
3. Starting Tj = 25°C, VDD = 30V, ID =25A
4. ISD ≤50A, di/dt ≤400A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
Unit
V
V
A
A
A
W
W/°C
mJ
V/ns
V
°C
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
TJ
Maximum lead temperature for soldering
purpose(1)
1. for 10 sec. 1.6mm from case
TO-220
D2PAK
I2PAK
TO-220FP
1.36
5
62.5
°C/W
°C/W
300
°C
3/18
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