PSMN130-200D Просмотр технического описания (PDF) - NXP Semiconductors.
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PSMN130-200D Datasheet PDF : 12 Pages
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PSMN130-200D
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 04 — 20 December 2010
Product data sheet
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Higher operating power due to low
thermal resistance
Low conduction losses due to low
on-state resistance
Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
DC-to-DC converters
Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
drain-source
voltage
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V
Ptot
total power
Tmb = 25 °C
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C
Dynamic characteristics
QGD
gate-drain charge VGS = 10 V; ID = 20 A;
VDS = 160 V; Tj = 25 °C
Min Typ Max Unit
-
-
200 V
-
-
20 A
-
-
150 W
-
120 130 mΩ
-
22 -
nC
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