BT138B-600 Просмотр технического описания (PDF) - WeEn Semiconductors

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BT138B-600

4Q Triac

WeEn Semiconductors 

WeEn Semiconductors

BT138B-600

4Q Triac

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

VDRM

repetitive peak off-state

voltage

IT(RMS)

RMS on-state current

full sine wave; Tmb ≤ 99 °C; Fig. 1; Fig. 2;

Fig. 3

ITSM

non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms;

state current

Fig. 4; Fig. 5

I2t

dIT/dt

I2t for fusing

rate of rise of on-state

current

full sine wave; Tj(init) = 25 °C; tp = 16.7 ms

tp = 10 ms; sine-wave pulse

IG = 150 mA

IGM

PGM

PG(AV)

Tstg

Tj

peak gate current

peak gate power

average gate power

storage temperature

junction temperature

over any 20 ms period

15

IT(RMS)

(A)

12

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99 °C

50

IT(RMS)

(A)

40

Min Max Unit

-

600 V

-

12

A

-

95

A

-

105 A

-

45

A²s

-

50

A/µs

-

2

A

-

5

W

-

0.5 W

-40 150 °C

-

125 °C

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9

30

6

20

3

10

0

-50

0

50

100

150

Tmb (°C)

Fig. 1. RMS on-state current as a function of mounting

base temperature; maximum values

0 10-2

10-1

1

10

surge duration (s)

f = 50 Hz; Tmb = 99 °C

Fig. 2. RMS on-state current as a function of surge

duration; maximum values

BT138B-600

Product data sheet

All information provided in this document is subject to legal disclaimers.

23 July 2018

© WeEn Semiconductors Co., Ltd. 2018. All rights reserved

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