ST380CH Просмотр технического описания (PDF) - International Rectifier
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ST380CH Datasheet PDF : 7 Pages
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ST380CH..C Series
Bulletin I25169 rev. C 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number Code
VDRM/VRRM, max. repetitive
peak and off-state voltage
V
04
400
ST380CH..C
06
600
VRSM , maximum non-
repetitive peak voltage
V
500
700
IDRM/IRRM max.
@ TJ = TJ max
mA
100
On-state Conduction
Parameter
I
Max. average on-state current
T(AV)
@ Heatsink temperature
I
Max. RMS on-state current
T(RMS)
ITSM Max. peak, one-cycle
non-repetitive surge current
I 2t
Maximum I2t for fusing
I2√ t Maximum I2√t for fusing
VT(TO)1 Low level value of threshold
voltage
VT(TO)2 High level value of threshold
voltage
rt1
Low level value of on-state
slope resistance
rt2
High level value of on-state
slope resistance
VTM Max. on-state voltage
IH
Maximum holding current
I
Typical latching current
L
ST380CH..C
960 (440)
80 (110)
2220
12500
13000
10500
11000
782
713
553
505
7820
Units Conditions
A 180° conduction, half sine wave
°C double side (single side) cooled
DC @ 25°C heatsink temperature double side cooled
t = 10ms No voltage
A t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
KA2s
KA2√s
t = 10ms No voltage
t = 8.3ms reapplied
Initial TJ = TJ max.
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 0.1 to 10ms, no voltage reapplied
0.85
0.88
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
V
(I > π x IT(AV)),TJ = TJ max.
0.25
0.24
1.58
600
1000
(16.7%
x
π
x
I
T(AV)
<
I
<
π
x
I ),
T(AV)
T
J
=
T
J
max.
mΩ
(I
>
π
x
I ),T
T(AV) J
=
T
J
max.
V
Ipk= 2900A, TJ = TJ max, tp = 10ms sine pulse
mA TJ = 25° C, anode supply 12V resistive load
Switching
di/dt
Parameter
Max. non-repetitive rate of rise
of turned-on current
td
Typical delay time
tq
Typical turn-off time
ST380CH..C
1000
1.0
100
Units Conditions
A/µs
µs
Gate drive 20V, 20Ω, tr ≤ 1µs
T
J
=
T
J
max,
anode
voltage
≤
80%
V
DRM
Gate current 1A, dig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V
dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs
2
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