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ISL9014A

Dual LDO with Low Noise, Low IQ, and High PSRR

Renesas Electronics 

ISL9014A

Electrical Specifications

PARAMETER

Unless otherwise noted, all parameters are guaranteed over the operational supply voltage and temperature

range of the device as follows: TA = -40°C to +85°C; VIN = (VO + 1.0V) to 6.5V with a minimum VIN of 2.3V;

CIN = 1µF; CO = 1µF; CBYP = 0.01µF (Continued)

SYMBOL

TEST CONDITIONS

MIN

MAX

(Note 7) TYP (Note 7) UNITS

Output Noise Voltage

IO = 100µA, VO = 1.5V, TA = +25°C, CBYP = 0.1µF

BW = 10Hz to 100kHz

30

µVRMS

DEVICE START-UP CHARACTERISTICS

Device Enable tIme

tEN Time from assertion of the ENx pin to when the output voltage

reaches 95% of the VO(nom)

250

500

µs

LDO Soft-Start Ramp Rate

tSSR

Slope of linear portion of LDO output voltage ramp during

start-up

30

60

µs/V

EN1, EN2 PIN CHARACTERISTICS

Input Low Voltage

VIL

-0.3

Input High Voltage

VIH

1.4

Input Leakage Current

IIL, IIH

Pin Capacitance

CPIN Informative

NOTES:

6. VOx = 0.98*VOx(NOM); Valid for VOx greater than 1.85V.

7. Parts are 100% tested at +25°C. Temperature limits established by characterization and are not production tested.

0.5

V

VIN + 0.3 V

0.1

µA

5

pF

FN6438 Rev 3.00

December 10, 2015

Page 5 of 13

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