IRF7401PBF-1 Просмотр технического описания (PDF) - International Rectifier

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IRF7401PBF-1

HEXFET® Power MOSFET

International Rectifier 

IRF7401PbF-1

1000

100

VGS

TOP

7.5V

5.0V

4.0V

3.5V

3.0V

2.5V

2.0V

BOTTOM 1.5V

1000

100

VGS

TOP

7.5V

5.0V

4.0V

3.5V

3.0V

2.5V

2.0V

BOTTOM 1.5V

10

1.5V 20μs PULSE WIDTH

1

TA = 25°C

A

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

10

1.5V

20μs PULSE WIDTH

1

TJ = 150°C

A

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000

2.0 ID = 6.9A

1.5

TJ = 25°C

100

TJ = 150°C

1.0

10

0.5

VDS = 15V

20μs PULSE WIDTH

1

A

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

VGS , Gate-to-Source Voltage (V)

0.0

VGS = 4.5V

A

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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November 18, 2013

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