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IRF432

4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET

Intersil 

IRF430

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg

IRF430

500

500

4.5

3.0

18

±20

75

0.6

300

-55 to 150

300

260

UNITS

V

V

A

A

A

V

W

W/oC

mJ

oC

oC

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

Drain to Source Breakdown Voltage

Gate Threshold Voltage

Gate to Source Leakage Current

Zero Gate Voltage Drain Current

On-State Drain Current (Note 2)

Drain to Source On Resistance (Note 2)

Forward Transconductance (Note 2)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

(Gate to Source + Gate to Drain)

Gate to Source Charge

Gate to Drain “Miller” Charge

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Internal Drain Inductance

BVDSS ID = 250µA, VGS = 0V (Figure 10)

500

VGS(TH) VGS = VDS, ID = 250µA

2.0

IGSS VGS = ±20V

IDSS VDS = Rated BVDSS, VGS = 0V

-

VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC -

ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7) 4.5

rDS(ON) ID = 2.5A, VGS = 10V (Figures 8, 9)

-

gfs

VDS ≥ 10V, ID = 2.7A (Figure 12)

2.5

td(ON) VDD = 250V, ID ≈ 4.5A, RG = 12Ω, RL = 50Ω

-

tr

(Figures 17, 18) MOSFET Switching Times are

Essentially Independent of Operating

-

td(OFF) Temperature

-

tf

-

Qg(TOT) VGS = 10V, ID ≈ 6.0A, VDS = 0.8 x Rated BVDSS, -

Ig(REF) = 1.5mA (Figures 14, 19, 20) Gate

Qgs

Charge is Essentially Independent of Operating

Temperature

-

Qgd

-

CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 11)

-

COSS

-

CRSS

-

LD

Measured between the Modified MOSFET

-

Contact Screw on the Symbol Showing the

Flange that is Closer to Internal Devices

Source and Gate Pins Inductances

and the Center of Die

D

TYP MAX UNITS

-

-

V

-

4.0

V

±100

nA

-

25

µA

-

250

µA

-

-

A

1.3 1.500

Ω

3.2

-

S

11

17

ns

15

23

ns

35

53

ns

15

23

ns

22

32

nC

3.5

-

nC

11

-

nC

600

-

pF

100

-

pF

30

-

pF

5.0

-

nH

Internal Source Inductance

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

LS

Measured from the

Source Lead, 6mm

(0.25in) from the Flange

G

and the Source Bonding

Pad

RθJC

RθJA

Free Air Operation

LD

LS

S

-

12.5

-

nH

-

-

0.83 oC/W

-

-

30

oC/W

2

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