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STB15NM60ND

N-channel 600 V - 0.27 Ω - 14 A - FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247

STMicroelectronics 

STB15NM60ND - STF/I15NM60ND

STP15NM60ND - STW15NM60ND

N-channel 600 V - 0.27 Ω - 14 A - FDmesh™ II Power MOSFET

D2PAK, I2PAK, TO-220, TO-220FP, TO-247

Features

Type

VDSS (@Tjmax) RDS(on) max ID

STB15NM60ND

STF15NM60ND

STI15NM60ND

STP15NM60ND

STW15NM60ND

650 V

0.299 Ω

14 A

14 A

14 A(1)

14 A

14 A

1. Limited only by maximum temperature allowed

■ The worldwide best RDS(on)* area amongst the

fast recovery diode devices

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

■ Extremely high dv/dt and avalanche

capabilities

Application

■ Switching applications

Description

The FDmesh™ II series belongs to the second

generation of MDmesh™ technology. This

revolutionary Power MOSFET associates a new

vertical structure to the company's strip layout

and associates all advantages of reduced on-

resistance and fast switching with an intrinsic fast-

recovery body diode.Strongly recommended for

bridge topologies, in ZVS phase-shift converters.

3

1

D2PAK

3

2

1

TO-220

3

2

1

TO-247

123

I²PAK

3

2

1

TO-220FP

Figure 1. Internal schematic diagram

Table 1. Device summary

Order codes

Marking

STB15NM60ND

STF15NM60ND

STI15NM60ND

STP15NM60ND

STW15NM60ND

15NM60ND

15NM60ND

15NM60ND

15NM60ND

15NM60ND

April 2008

Rev 2

Package

D2PAK

TO-220FP

I2PAK

TO-220

TO-247

Packaging

Tape and reel

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