IRF7478TRPBF Просмотр технического описания (PDF) - International Rectifier
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IRF7478TRPBF Datasheet PDF : 8 Pages
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IRF7478PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
60
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient –––
RDS(on)
–––
Static Drain-to-Source On-Resistance –––
VGS(th)
Gate Threshold Voltage
1.0
IDSS
Drain-to-Source Leakage Current
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
––– –––
0.065 –––
20 26
23 30
––– 3.0
––– 20
––– 100
––– 100
––– -100
V
V/°C
mΩ
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 4.2A
VGS = 4.5V, ID = 3.5A
VDS = VGS, ID = 250µA
VDS = 48V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
17 ––– ––– S VDS = 50V, ID = 4.2A
Qg
Total Gate Charge
––– 21 31
ID = 4.2A
Qgs
Gate-to-Source Charge
––– 4.3 ––– nC VDS = 48V
Qgd
Gate-to-Drain ("Miller") Charge
––– 9.6 –––
VGS = 4.5V
td(on)
Turn-On Delay Time
––– 7.7 –––
VDD = 30V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 2.6 ––– ns ID = 4.2A
––– 44 –––
RG = 6.2Ω
tf
Fall Time
––– 13 –––
VGS = 10V
Ciss
Input Capacitance
––– 1740 –––
VGS = 0V
Coss
Output Capacitance
––– 300 –––
VDS = 25V
Crss
Reverse Transfer Capacitance
––– 37 ––– pF ƒ = 1.0MHz
Coss
Output Capacitance
––– 1590 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
––– 220 –––
VGS = 0V, VDS = 48V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance
––– 410 –––
VGS = 0V, VDS = 0V to 48V
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
140
4.2
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
2
Min.
–––
–––
–––
–––
–––
Typ. Max.
––– 2.3
––– 56
––– 1.3
52 78
100 150
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 4.2A, VGS = 0V
TJ = 25°C, IF = 4.2A
di/dt = 100A/µs
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