C3D03060A Просмотр технического описания (PDF) - Cree, Inc

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C3D03060A

Silicon Carbide Schottky Diode

Cree, Inc 

Electrical Characteristics

Symbol Parameter

Typ. Max. Unit

Test Conditions

VF

Forward Voltage

1.5

1.7

1.8

2.4

V

IF = 3 A TJ=25°C

IF = 3 A TJ=175°C

IR

Reverse Current

10

50

20

100

μA

VR = 600 V TJ=25°C

VR = 600 V TJ=175°C

QC

Total Capacitive Charge

6.7

VR = 600 V, IF = 3A

nC

di/dt = 500 A/μS

TJ = 25°C

C

Total Capacitance

155

VR = 0 V, TJ = 25°C, f = 1 MHz

13

pF

VR = 200 V, TJ = 25˚C, f = 1 MHz

12

VR = 400 V, TJ = 25˚C, f = 1 MHz

Note:

1. This is a majority carrier diode, so there is no reverse recovery charge.

Thermal Characteristics

Symbol Parameter

RθJC

TO-220 Package Thermal Resistance from Junction to Case

Typ.

2.8

Unit

°C/W

Note

Typical Performance

6.06.0

5.05.0

4.04.0

TJ = 25°C

TJ = 75°C

TJ = 125°C

TJ = 175°C

3.03.0

2.02.0

1.01.0

1.4E1-045

1.2E1-025

1.0E1-005

8.0E-086

Current 25C

Current 75C

6.0E-066

Current 125C

Current 175C

4.0E-046

2.0E-026

TJ = 25°C

TJ = 75°C

TJ = 125°C

TJ = 175°

Current 25C

Current 75C

Current 125

Current 175

00.0

00..00

00..55 11..00 11..55 22..00 22..55 33..00

VF

Forward Voltage

Forward Voltage

(V)

Figure 1. Forward Characteristics

0.0E+000

00 110000 220000 330000 440000 550000 660000 770000 808000

VR RevReevresrsee BViaso(Vlt)age (V)

Figure 2. Reverse Characteristics

2

C3D03060A Rev. D

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