DMG3401LSN Просмотр технического описания (PDF) - ZP Semiconductor
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DMG3401LSN Datasheet PDF : 2 Pages
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DMG3401LSN
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -10V
Continuous Drain Current (Note 6) VGS = -10V
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current (Note 6)
Steady
State
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
Value
-30
±12
-3.0
-2.3
-3.7
-2.9
-30
-1.5
Units
V
V
A
A
A
A
Thermal Characteristics
Total Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 6)
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
0.8
1.2
159
105
36
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol Min
BVDSS
-30
IDSS
-
IGSS
-
VGS(th)
RDS (ON)
|Yfs|
VSD
-0.5
-
-
-
-
-
Ciss
-
Coss
-
Crss
-
Rg
-
Qg
-
Qg
-
Qgs
-
Qgd
-
tD(on)
-
tr
-
tD(off)
-
tf
-
Typ
-
-
-
-1.0
41
47
60
12
-0.8
1326
103
71
7.3
11.6
25.1
2
1.7
8
13
71
38
Max
-
-1.0
±100
-1.3
50
60
85
-
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
Notes:
3. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
4. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
5.Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing
Unit
V
µA
nA
V
mΩ
S
V
pF
Ω
nC
nS
Test Condition
VGS = 0V, ID = -250μA
VDS =-30V, VGS = 0V
VGS = ±12V, VDS = 0V
VDS = VGS, ID = -250μA
VGS = -10V, ID = -4A
VGS = -4.5V, ID = -3.5A
VGS = -2.5V, ID = -2.5A
VDS = -5V, ID = -4A
VGS = 0V, IS = -1A
VDS = -15V, VGS = 0V, f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VDD = -15V, ID = -4A
VDS = -15V, VGS = -10V,
RGEN = 6Ω, RL = 3.75Ω
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