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MUR3060

Ultrafast Recovery Rectifier

Inchange Semiconductor 

INCHANGE Semiconductor

Ultrafast Recovery Rectifier

Product Specification

MUR3060

FEATURES

·Ultrafast Recovery Time

·Low Forward Voltage

·Low Leakage Current

·175℃ Operating Junction Temperature

·High Temperature Glass Passivated Junction

MECHANICAL CHARACTERISTICS

·Case: Epoxy, Molded

·Finish: All External Surfaces Corrosion Resistant and

Terminal Leads are Readily Solderable

·Lead Temperature for Soldering Purposes: 260℃ Max.

for 10 Seconds

APPLICATIONS

·Designed for use in switching power supplies, inverters and

as free wheeling diodes.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VRRM

VRW M

VR

IF(AV)

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current

(Rated VR)

600

V

30

A

Peak Repetitive Forward Current

IFRM

(Rated VR,Square Wave,20kHz)

30

A

Nonrepetitive Peak Surge Current

IFSM

(Surge applied at rated load conditions

300

A

half-wave, single phase, 60Hz)

TJ

Junction Temperature

-65~175 ℃

Tstg

Storage Temperature Range

-65~175 ℃

isc website：www.iscsemi.cn

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