IRF620 Просмотр технического описания (PDF) - Unspecified
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IRF620 Datasheet PDF : 5 Pages
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IRL220-223/IRF620-623
MTP7N18/7N20
N-Channel Power Mosfets
7A,150-200V
Maximum Ratings
Symbol
VDSS
VDGR
VGS
TJ,Tstg
TL
Characteristic
Drain to Source Voltage 1
Drain to Gate Voltage1
RGS=20k Ω
Gate to Source Voltage
Operating Junction and
Storage Temperature
Maximum Lead Temperature
for Soldering Purposes,
1/8” From Case for 5S
Rating
IRF220/222
IRF620/622
MTP7N20
200
200
Rating
MTP7N18
180
180
Rating
IRF222/223
IRF622/623
Unit
150
V
150
V
±20
±20
±20
V
-55 to +150
-55 to +150
-55 to +150
℃
275
275
275
℃
Maximum Thermal characteristics
R ӨJC
R ӨJA
Thermal Resistance
Junction to Case
Thermal Resistance
Junction to Ambient
IRF220-223/irf620-623
3.12
30/80
MTP7N/20
1.67
80
℃/W
℃/W
PD
Total Power Dissipation
40
at TC=25℃
IDM
Pulsed Drain Current 2
20
Electrical Characteristics (TC=25℃ unless otherwise noted)
Symbol
Characteristic
Min
Max
Off Characteristics
75
W
20
A
Unit
Test Conditions
V(BR)DSS
Drain Source Breakdown Voltage1
IRF220/222/620/622/
200
MTP7N20
MTP7N18
180
IRF221/223/621/623
V
VGS=0V, ID=250µA
150
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
IRF220-223
IRF620-623/MTP7N18/20
250
µA
1000
µA
nA
±100
±500
VDS=Rated VDSS, VGS=0V
VDS=0.8xRated VDSS,
VGS=0V, Tc=125℃
VGS=±20V, VDS=0V
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