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1N3292R Просмотр технического описания (PDF) - New Jersey Semiconductor

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Компоненты Описание
Список матч
1N3292R
NJSEMI
New Jersey Semiconductor NJSEMI
1N3292R Datasheet PDF : 1 Pages
1
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
1N3288(R)-1N3297(R)
High Current Rectifier
VBRM= 50-1400V, I,,AV)=: 100 A ,VF = 1.2V
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Cathode to Stud
(Anode to Stud add Suffix R)
MAXIMUM RATINGS (Tj = 25 C unl™ stated othwwis.)
Parameter
Symbol
Repetitive Peak Reverse Voltage
VRRM
1N3288J 1N3289I 1N3290; 1N3291 1N3292| 1N3293! 1N3294; 1N3295J 1N3296J 1N3297: Unit
100 ! 200 i 300
400 500
600 800 1 1000 1200 1400
Volt
Maximum Average On-State Current
lp(AV)
100
Amp
Peak Forward Surge Current
i IFSM
1600
Amp
Maximum I 'T for Fusing
I=T
10700
MS
Maximum Storage Temperature Range
T(STG)
-65 to +200
°c
Maximum Junction Temperature Range
Tj
-65 to +200
°c
ELECTRICAL CHARACTERISES at
Parameter
Maximum Forward Voltage
Tj = 25° C Maximum. Unless stated Otherwise
Symbol !
condition
n
Mi
VFM
IFM =200 Amps
Value
I Typ
1.2
Max Unit
Volt
Repetitive Peak Off- State Current (1)
Repetitive Peak Off- State Current (2)
Operating Frequency
Thermal Resistance (Junction to Case)
Mounting Torque
Weight
IORM(1)
W>
w,
V^VRRU
VR=VRBU,Tj = 150°C
RTH,«
MT
Wt !
I
!
20.0 i
UA
i
;5
mA
|
i 7.5 KHz
'• 0.40 1 °c/w
i 11.3 NM
i
: 78 grms
16.25(0.640) ! 18.80(0.740)
15.50(0.610) ! 16.76(0.660)
117.47(4.625)
111.13(4.375)
10.41(0.410)
8.90(0.350)
21.47(0.843)
21.20(0.835)
7.39(0.291)
6.89(0.271)
if.
15.24(0.60)
12.70(0.50)
3/8"-24UNF-2A i 39.37 (1.550) i
Max
8.30(0.327)
7.55(0.297)
DO-8
Quality Semi-Conductors

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