1N5712 Просмотр технического описания (PDF) - Shenzhen Luguang Electronic Technology Co., Ltd

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1N5712

Small Signal Schottky Diodes

Shenzhen Luguang Electronic Technology Co., Ltd 

Features

Metal-to-silicon junction

High breakdown voltage

Low turn-on voltage

Ultrafast switching speed

Prmarly intended for high level UHF/VHF detection

and pulse applications with broad dynamic range

Mechanical Data

Case:JEDEC DO--35,glass case

Polarity: Color band denotes cathode end

Weight: Approx. 0.13 gram

ABSOLUTE RATINGS(LIMITING VALUES)

Peak reverse voltage

Pow er dissipation (Infinite Heat Sink)

Forw ard continuous current

Junction and storage temperature range

Maximumlead temperature for soldering during 10S at 4mmfromcase

1N5712

Small Signal Schottky Diodes

VOLTAGE RANGE: 20 V

POWER DISSIPATION: 430 mW

DO - 35(GLASS)

Dimensions in millimeters

Symbols

VRRM

Ptot

IFSM

TJ/TSTG

TL

Value

20.0

430.0

35.0

c-55 ---+ 150

230

UNITS

V

mW

mA

ELECTRICAL CHARACTERISTICS

Reverse breakdow n voltage @ IR=10 A

Leakage current

@ VR=16V

Forw ard voltage drop @ IF=1mA

Test pulse: tp 300 s <2% IF=35mA

Junction capacitance @ VR=0V,f=1MHz

Thermal resistance

Symbols

Min.

Typ.

Max. UNITS

VR

IR

VF

CJ

RθJA

20.0

V

150

nA

0.41

V

1.0

2

pF

400

K/W

http://www.luguang.cn

mail:lge@luguang.cn

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