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SST2604-C Datasheet PDF : 4 Pages
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Elektronische Bauelemente
SST2604-C
5A, 30V, RDS(ON) 25mΩ
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
30
Gate Threshold Voltage
VGS(th)
1
Forward Transconductance
gfs
-
Gate-Source Leakage Current
IGSS
-
Drain-Source Leakage TJ=25°C
-
Current
IDSS
TJ=55°C
-
-
Static Drain-Source On-Resistance 4 RDS(ON)
-
-
-
V
-
2.5
V
7
-
S
-
±100
nA
-
1
µA
-
5
-
25
mΩ
-
30
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Qg
-
6
-
Qgs
-
2.5
-
nC
Qgd
-
2.1
-
Td(on)
-
2.4
-
Tr
-
7.8
-
nS
Td(off)
-
22
-
Tf
-
4
-
Ciss
-
572
-
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current 1
Pulsed Source Current 3
Forward on Voltage 4
Reverse Recovery Time
Coss
-
81
-
pF
Crss
-
65
-
Source-Drain Diode
IS
-
ISM
-
VSD
-
trr
-
-
5
A
-
20
-
1.2
V
19
-
nS
Reverse Recovery Charge
Qrr
-
1.04
-
nC
Notes:
1. Surface Mounted on 1”x1” FR4 Board with 2OZ copper.
2. When mounted on Min. Copper pad.
3. Pulse width limited by maximum junction temperature, Pulse Width≦300µs, Duty Cycle≦2%.
4. Pulse Test: Pulse Width≦300µs, Duty Cycle≦2%.
Test Conditions
VGS=0, ID=250µA
VDS=VGS, ID=250µA
VDS=5V, ID=5A
VGS= ±20V
VDS=24V, VGS=0
V DS=24V, VGS=0
VGS=10V, ID=5A
VGS=4.5V, ID=4A
ID=5A
VDS=15V
VGS=4.5V
VDD=15V
ID=5A
VGS=10V
RG=3.3Ω
VGS=0
VDS=15V
f=1MHz
IS=1A, VGS=0
IF=5A, dI/dt=100A/µs
TJ=25°C
http://www.SeCoSGmbH.com/
15-May-2018 Rev. D
Any changes of specification will not be informed individually.
Page 2 of 4
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