BAT54PBF Просмотр технического описания (PDF) - Vishay Semiconductors

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BAT54PBF

Schottky Diode, 0.2 A

Vishay Semiconductors 

BAT54PbF

Vishay High Power Products Schottky Diode, 0.2 A

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

Maximum forward voltage drop

VFM (1)

Maximum reverse leakage current

IRM (1)

Maximum junction capacitance

Maximum voltage rate of change

Note

(1) Pulse width < 300 µs, duty cycle < 2 %

CT

dV/dt

TEST CONDITIONS

0.1 A

30 mA

10 mA

1 mA

0.1 mA

TJ = 25 °C

VR = 25 V

VR = 30 V

VR = 1 VDC (test signal range 100 kHz to 1 MHz), TJ = 25 °C

Rated VR

VALUES

0.65

0.50

0.40

0.32

0.24

2

3

10

10 000

UNITS

V

µA

pF

V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

Maximum junction and storage

temperature range

Maximum thermal resistance,

junction to ambient

TJ (1), TStg

RthJA

Mounted on PC board FR4 with minimum pad size

Approximate weight

Marking device

Case style SOT-23

Note

(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink

dTJ RthJA

VALUES

- 65 to 150

UNITS

°C

500

°C/W

0.008

g

EYWLC

www.vishay.com

2

For technical questions, contact: diodes-tech@vishay.com

Document Number: 94271

Revision: 19-Sep-08

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