MMBT5550 Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
MMBT5550 Datasheet PDF : 6 Pages
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Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain
vs Collector Current
250
200
125 oC
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
0.5
0.4
β = 10
150
100
50 VCE = 5V
25 oC
-40 oC
0
0.1 0.2
0.5 1 2
5 10 20
50 100
IC - COLLECTOR CURRENT (mA)
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
1.0
β = 10
- 40 oC
0.8
25 oC
0.6
125 oC
0.4
0.2
0.0
1
10
100 200
IC - COLLECTOR CURRENT (mA)
Figure 5. Collector Cutoff Current
vs Ambient Temperature
0.3
25 oC
0.2
125 oC
0.1
- 40 oC
0.0
1
10
100
IC - COLLECTOR CURRENT (mA)
Figure 4. Base-Emitter On Voltage
vs Collector Current
1.0
- 40 oC
0.8
0.6
25 oC
0.4
125 oC
0.2
VCE = 5V
0.0
0.1
1
10
100
IC - COLLECTOR CURRENT (mA)
Figure 6. Input and Output Capacitance
vs Reverse Voltaget
50
VCB = 100V
10
1
25
50
75
100
125
TA - AMBIE NT TEMP ERATURE (°C)
30
25
20
15
10
5
0
0.1
f = 1.0 MHz
C ib
C cb
1
10
100
VCE - COLLECTOR VOLTAGE (V)
MMBT5550 Rev. A
3
www.fairchildsemi.com
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