1N5614 Просмотр технического описания (PDF) - New Jersey Semiconductor
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1N5614 Datasheet PDF : 2 Pages
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CHARACTERISTICS (@ 25°C unless otherwise specified)
Symbol 1N5614 1N5616 1N5618 1N5620 1N5622 Unit
S2M S4M S6M S8M SOM
Average forward current (sine wave)
- 11 IdA. |J(_U illULUlltXl, 1A "~ »W *—
IF(AV)
•,
- m maaxv. TL. —"o* //fot"-/ TITL — £5R5<V*"->
IF(AV)
•
I2t for fusing (t = 8.3mS) max.
I2t
t
Forward voltage drop max.
@ Tt: ~ 1 DA T- — 7cior'
VF
i
Reverse current max.
@ VVmRAWrxM/r/ Ti -j — 49--5J'Y*~1
@ VRWM, Tj = 100°C
IR
,
IR
'
Reverse recovery time max.
trr
.
0.5A IF to I.OA IR. Recovers to 0.25A IRR.
Junction capacitance typ.
q
<•
@VR = 5V,f=lMHz
Thermal resistance - junction to lead
Lead length = 0.375"
RejL
1•
Lead length = 0"
RejL
rf
*
Thermal resistance - junction to amb.
on 0.06" thick pcb. 1 oz. copper.
RejA
t*
"
il.Un
^z.un
en
11
n^
,-- oL^r>
on
IzT .3
••••
J1Oft
ry
(
QyRj
'»
A
*•
A
»
A2S
i
V
»
HA
*•
I^A
,
US
.*
pF
*k °C/W
°c/w fc
'-
*p °c/w
10'
Zu,
10'
10'
030
101
Q
(pF)
10'
S
10"
10*
W*
10'1
10°
10'
10'
t (Sees)
Fig 1. Transient thermal impedance characteristic.
10'
10''
10°
10'
10*
104
VR (Volts)
Fig 2. Typical junction capacitance as a function of
reverse voltage.
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