FS50UM-3 Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC
Номер в каталоге
Компоненты Описание
Список матч
FS50UM-3 Datasheet PDF : 4 Pages
| |||
MITSUBISHI Nch POWER MOSFET
FS50UM-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 150V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 25A, VGS = 10V
ID = 25A, VGS = 10V
ID = 25A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 80V, ID = 25A, VGS = 10V, RGEN = RGS = 50Ω
IS = 25A, VGS = 0V
Channel to case
IS = 50A, dis/dt = –100A/µs
Limits
Unit
Min.
Typ. Max.
150
—
—
V
—
—
±0.1
µA
—
—
0.1
mA
2.0
3.0
4.0
V
—
24
31
mΩ
—
0.600 0.775 V
—
55
—
S
—
6540
—
pF
—
860
—
pF
—
360
—
pF
—
95
—
ns
—
155
—
ns
—
380
—
ns
—
180
—
ns
—
1.0
1.5
V
—
—
1.0 °C/W
—
130
—
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
200
160
120
80
40
0
0
50
100
150
200
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V 10V 8V
100
7V
6V
80
TC = 25°C
60
Pulse Test
MAXIMUM SAFE OPERATING AREA
3
2
102
7
tw = 10ms
5
3
2
100ms
101
7
1ms
5
3
2
10ms
100
7
5
TC = 25°C
Single Pulse
DC
3
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
50
VGS = 20V
40
10V 7V
6V
TC = 25°C
Pulse Test
5V
30
40
5V
20
PD = 125W
0
0 1.0 2.0 3.0 4.0 5.0
DRAIN-SOURCE VOLTAGE VDS (V)
20
10
4V
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
Share Link: 