BDX63B Просмотр технического описания (PDF) - TT Electronics.
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BDX63B Datasheet PDF : 3 Pages
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NPN EPITAXIAL BASE
DARLINGTON POWER TRANSISTOR
BDX63 / BDX63A / BDX63B / BDX63C
Hermetic TO3 Metal Package
Ideally Suited for General Purpose Switching
and Amplifier Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
BDX63 BDX63A BDX63B
VCEO
VCBO
VEBO
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current, Per Device
60V
80V
100V
80V
100V 120V
5V
IC
Collector Current
ICM
Collector Current (peak)
IB
Base Current
Ptot
Total Power Dissipation @ TC = 25°C
TJ
Junction Temperature Range
8A
12A
150mA
90W
-55 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
BDX63C
120V
140V
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
Max.
1.94
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab
assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that
datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone: +44 (0) 1455 556565
Fax: +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number: 10935
Issue: 1
Page: 1 of 3
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