BCR8PM-12LA Просмотр технического описания (PDF) - Inchange Semiconductor
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BCR8PM-12LA Datasheet PDF : 1 Pages
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isc Thyristors
INCHANGE Semiconductor
BCR8PM-12LA
DESCRIPTION
·With TO-220F packaging
·Operating in 3 quadrants
·High commutation capability
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Solid state relays;heating and cooking appliances
·Switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM
VRRM
IT(RSM)
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Average on-state current
@Tc=113℃
ITSM Surge non-repetitive on-state current
60HZ
MAX
600
600
8
80
UNIT
V
V
A
A
PG(AV) Average gate power dissipation ( over any 20 ms period ) @Tc=150℃
0.5
W
Tj
Operating junction temperature
Tstg Storage temperature
-40~125 ℃
-40~125 ℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
Repetitive peak reverse current VR=VRRM Rated;
IDRM Repetitive peak off-state current VD=VDRM Rated;
Tj=25℃;
Tj=150℃
VTM On-state voltage
IGT
Gate-trigger current
VGT
Rth (j-c)
Gate-trigger voltage
Junction to case
IT=12A
Ⅰ
VD =6V;RL=6Ω;RG=330Ω Ⅱ
Ⅲ
VD =6V;RL=6Ω;RG=330Ω
Half cycle
MIN MAX UNIT
50
2000
μA
1.6 V
30
30 mA
30
1.5 V
3.7 ℃/W
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