BCW65B Просмотр технического описания (PDF) - Continental Device India Limited
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BCW65B Datasheet PDF : 3 Pages
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BCW65A, BCW65B
BCW65C
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
–VCBO
–VCEO
Emitter–base voltage (open collector)
–VEBO
Collector current (d.c.)
–IC
Total power dissipation at Tamb = 25°C Ptot
Storage temperature
Tstg
max.
max.
max.
max.
max
60 60 60 V
32 32 32 V
5
5
5V
800 800 800 mA
225 225 225 mW
–55 to +150 ° C
THERMAL CHARACTERISTICS
Tj = P (Rth j–t + Rth s–a) + Tamb
Thermal resistance
from junction to ambient
Rth j–a 556 556 556
°C/mW
CHARACTERISTICS (at TA = 25°C unless otherwise specified)
Collector–emitter breakdown voltage
–IC = 10 mA; IB = 0
Collector–base breakdown voltage
–V(BR)CEOmin. 32
–IC = 10 mA; VEB = 0
Emitter–base breakdown voltage
–V(BR)CES min. 60
–IE = 10 mA; IC = 0
Collector cut–off current
–V(BR)EBO min. 5
–VCE = 32 V; IE = 0
Emitter cut–off current
–ICES
max. 20
VEB = 4 V; IC =0
Output capacitance at f = 1 MHz
IEBO
max. 20
IE = 0; –VCB = 10 V
Input capacitance at f = 100 kHz
Cc
max. 12
IC = 0; –VEB = 0.5 V
Ce
max. 80
32 32 V
60 60 V
5
5V
20 20 nA
20 20 nA
12 12 pF
80 80 pF
Saturation voltages
–IC = 500 mA; –IB = 50 mA
–IC = 100 mA; –IB = 10 mA
–IC = 500 mA; –IB = 50 mA
Noise figure at RS = 1 kW
–IC = 0.2 mA; –VCE = 5 V
f = 1 KHz, BW = 200 Hz
–VCEsat
–VCEsat
–VBEsat
max. 0.7
typ. 0.3
max. 2
0.7 0.7 V
0.3 0.3 V
2
2V
NF
max. 10 10 10 dB
Current Gain-Band width Product
IC = 20 mA, VCE = 10V, f = 100 MHz fT
min 100 100 100 MHz
Continental Device India Limited
Data Sheet
Page 2 of 3
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