MBR2040 Просмотр технического описания (PDF) - Gaomi Xinghe Electronics Co., Ltd.
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MBR2040 Datasheet PDF : 2 Pages
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星合电子
ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ
MBR2020 THRU MBR20200
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 200 Volts
Forward Current - 20Amperes
FEATURES
Plastic package has Underwriters Laboratory Flammability Classification 94V-0
Metal silicon junction ,majority carrier conduction
Guard ring for overvoltage protection
Low power loss ,high efficiency
High current capability ,Low forward voltage drop
High surge capability
For use in low voltage ,high frequency inverters,
free wheeling ,and polarity protection applications
XH
MBR20200
Dual rectifier construction
High temperature soldering guaranteed:260° C/10 seconds,,
0.25"(6.35mm)from case
Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
0.159(4.05)
0.140(3.55)
0.053(1.34)
0.047(1.20)
MECHANICAL DATA
Case: JEDEC TO-220AC molded plastic body
Terminals: Lead solderable per MIL-STD-750,method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08ounce, 2.24 gram
TO-220AC
0.410(10.42)
0.388(9.85)
PIN
1
2
0.161(4.10)
0.147(3.74)
DIA
0.113(2.88)
0.102(2.60)
0.185(4.70)
0.175(4.44)
0.283(7.20)
0.244(6.20)
0.055(1.39)
0.045(1.14)
0.610(15.50)
0.571(14.50)
0.037(0.94)
0.027(0.68)
1.161(29.50)
1.106(28.10)
0.560(14.22)
0.512(13.00)
0.114(2.90)
0.098(2.50)
0.208(5.28)
0.192(4.88)
0.023(0.58)
0.014(0.35)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive
load. For capacitive load,derate by 20%.)
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward
rectified current(see Fig.1)
Per leg
Total device
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 20.0 A
Maximum instantaneous reverse T C =25 C
current at rated DC blocking
voltage(Note 1)
TC =125 C
Typical thermal resistance (Note 2)
Symbols
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
R JC
MBR
2020
20
14
20
MBR
2030
30
21
30
MBR
2040
40
28
40
MBR
2050
50
35
50
MBR
2060
60
42
60
10.0
20.0
MBR
2080
80
56
80
MBR
20100
100
70
100
MBR MBR
20150 20200
150
200
105
140
150
200
200.0
0.60
30
0.75
0.2
3.0
0.85
50
0.90 0.95
Operating junction temperature range
Storage temperature range
TJ
TSTG
-65 to+150
-65 to+150
Units
Volts
Volts
Volts
Amps
Amps
Volts
mA
C/W
C
C
Notes: 1.Pulse test: 300 s pulse width,1% duty cycle
2.Thermal resistance from junction to case
1
ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ ＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ
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